super trench mosfet-尊龙凯时手机版

济南晶恒 1997—
中国半导体分立器件研发制造基地
电子芯片,稳压二极管,开关二极管

标题

configuration

ch

vds(v)

id(a)

pd(w)

vgs(max)(v)

vth(min)(v)

vth(max)(v)

rds(on)(typ)(ω)@1.8v

rds(on)(typ)(ω)@2.5v

rds(on)(typ)(ω)@4.5v

rds(on)(typ)(ω)@10v

qg(typ)(nc)@4.5v

qg(typ)(nc)@10v

ciss(typ)(pf)

rg(ω)

outline

d25n10n single n 100 30 88 ±20 1.2 2.5 0.030 61 3540 to-251
d30p10 single p -100 -30 120 ±20 -1 -3 0.035 90 2700 to-220
d30p10f single p -100 -30 48 ±20 -1 -3 0.035 90 2700 ito-220
d30p10d single p -100 -30 120 ±20 -1 -3 0.035 90 2700 to-263
d30p10e single p -100 -30 120 ±20 -1 -3 0.035 90 2700 to-262
d30p10m single p -100 -30 120 ±20 -1 -3 0.035 90 2700 to-252
d30p10n single p -100 -30 120 ±20 -1 -3 0.035 90 2700 to-251
d65p06m single p -60 -65 130 ±20 -1.0 -3.0 0.013 70 to-252
d10p06 single p -60 -10 50 ±20 -1 -3 0.098 0.078 18 900 to-220
d10p06f single p -60 -10 20 ±20 -1 -3 0.098 0.078 18 900 ito-220
d10p06d single p -60 -10 50 ±20 -1 -3 0.098 0.078 18 900 to-263
d10p06e single p -60 -10 50 ±20 -1 -3 0.098 0.078 18 900 to-262
d10p06n single p -60 -10 50 ±20 -1 -3 0.098 0.078 18 900 to-251
d10p06m single p -60 -10 50 ±20 -1 -3 0.098 0.078 18 900 to-252
jhs6103 single p -60 -3.7 1.5 ±20 -1.2 -2.5 0.105 0.070 9.86 1447 13.5 sop-8
bss84 single p -60 -0.17 0.225 ±20 -0.9 -2.0 10 8 30 sot-23
jht4101 single p -40 -3.2 1.0 ±20 -1.0 -2.5 0.100 0.070 6.4 620 sot-23
jh3407a single p -30 -4.1 1.2 ±20 -1.0 -2.4 0.053 0.040 6.8 580 sot-23
jh3401a single p -30 -4.2 1.4 ±12 -0.4 -1.3 0.080 0.053 0.042 9.4 954 sot-23
jhl2303a single p -30 -3.0 1.1 ±20 -1.0 -2.4 0.080 0.060 4.2 375 sot-23
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